Chinese Journal of Lasers, Volume. 31, Issue 11, 1381(2004)

High-Gain Polarization-Insensitive Semiconductor Optical Amplifier with Tensile-Strained InGaAs/InP Bulk Material

[in Chinese]1,2、*, [in Chinese]1, [in Chinese]1, [in Chinese]1, [in Chinese]1, [in Chinese]1, and [in Chinese]1
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  • 2[in Chinese]
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    References(12)

    [1] [1] H. Taga, S. Yamamoto, K. Mochizuki et al.. 5 Gbit/s, 233 km optical fiber transmission experiment employing five semiconductor laser amplifiers [J]. IEEE Photon. Technol. Lett., 1989, 1(10):332~334

    [2] [2] Z. Bakonyi, G. Onishukov, C. Knll et al.. 10 Gbit/s RZ transmission over 5000 km with gain-clamped semiconductor optical amplifiers and saturable absorbers [J]. Electron. Lett., 2000, 36(21):1790~1791

    [3] [3] L. H. Spiekman, A .H. Gnauck, J. M. Wiesenfeld et al.. DWDM transmission of thirty two 10 Gbit/s channels through 160 km link using semiconductor optical amplifiers [J]. Electron. Lett., 2000, 36(12):1046~1047

    [5] [5] N. Yoshimoto, T. Ito, K. Magari et al.. Four-channel polarization-insensitive SOA gate array integrated with butt-jointed spot-size converters [J]. Electron. Lett., 1997, 33(24):2045~2046

    [6] [6] T. Durhuus, B. Mikkelsen, C. Joergensen et al.. All-optical wavelength conversion by semiconductor optical amplifiers [J]. J. Lightwave Technol., 1996, 14(6):942~947

    [8] [8] K. Kudo, K. Yashiki, T. Sasaki et al.. 1.55-μm wavelength-selectable microarry DFB-LD′s with monolithically integrated MMI combiner, SOA, and EA-modulator [J]. IEEE Photon. Technol. Lett., 2000, 12(3):242~244

    [9] [9] S. Cole, D. M. Cooper, W. J. Devlin et al.. Polarization-insensitive, near travelling-wave semiconductor laser amplifiers at 1.5 μm [J]. Electron Lett., 1989, 25(5):314~315

    [10] [10] P. Doussiere, P. Garabedian, C. Graver et al.. 1.55 μm polarization independent semiconductor optical amplifier with 25 dB fiber to fiber gain [J]. IEEE Photon. Technol. Lett., 1994, 6(2):170~172

    [11] [11] S. Kitamura, K. Komatsu, M. S. Kitamura. Polarization-insensitive semiconductor optical amplifier array grown by selective MOVPE [J]. IEEE Photon. Technol. Lett., 1994, 6(2):173~175

    [13] [13] M. Bachmann, P. Doussière, J. Y. Emery et al.. Polarisation-insensitive clamped-gain SOA with integrated spot-size convertor and DBR grating for WDM applications at 1.55 μm wavelength [J]. Electron. Lett., 1996, 32(22):2076~2077

    [14] [14] M. Itoh, Y. Shibata, T. Kakisuka et al.. Polarization-insensitive SOA with a strained bulk active layer for network device application [J]. IEEE Photon. Technol. Lett., 2002, 14(6):765~767

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. High-Gain Polarization-Insensitive Semiconductor Optical Amplifier with Tensile-Strained InGaAs/InP Bulk Material[J]. Chinese Journal of Lasers, 2004, 31(11): 1381

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    Paper Information

    Category: Optical communication

    Received: Jun. 23, 2003

    Accepted: --

    Published Online: Jun. 12, 2006

    The Author Email: (shrw@red.semi.ac.cn)

    DOI:

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