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Journal of Synthetic Crystals, Volume. 54, Issue 3, 517(2025)

Mesa Termination Technology for NiO/β-Ga2O3 Heterojunction Diode

WEN Junpeng, HAO Weibing, HAN Zhao, XU Guangwei*, and LONG Shibing
Author Affiliations
  • School of Microelectronics, University of Science and Technology of China, Hefei 230026, China
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    WEN Junpeng, HAO Weibing, HAN Zhao, XU Guangwei, LONG Shibing. Mesa Termination Technology for NiO/β-Ga2O3 Heterojunction Diode[J]. Journal of Synthetic Crystals, 2025, 54(3): 517

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    Paper Information

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    Received: Jan. 13, 2025

    Accepted: Apr. 23, 2025

    Published Online: Apr. 23, 2025

    The Author Email: XU Guangwei (xugw@ustc.edu.cn)

    DOI:10.16553/j.cnki.issn1000-985x.2024.0328

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology