Laser & Infrared, Volume. 54, Issue 7, 1076(2024)

Infrared detector electrode design

GONG Zhi-hong, GAN Yu-mei, LIU Sen, LI Zhong-he, and ZHANG Lei
Author Affiliations
  • North China Research Institute of Electro-Optics, Beijing 100015 China
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    References(8)

    [1] [1] Maurer T, Wilson DL, Smith SR, et al. Search and detection comparing midwave and longwaveiafared[J]. Optical Engineering, 2009, 48(11): 933-956.

    [2] [2] Rogalski A. Infareddetectors: an overview[J]. Infrared Physics & Technology, 2002, 43(3): 187-210.

    [3] [3] Rogalski A. Third-generation infrared photo detectors[J]. Optical Engineering, 2003, 42(12): 3498-3516.

    [4] [4] Merken P, John J, et al. Technology for very dense hybrid detector arrays using electroplated indium solderbumps[J]. IEEE Transacitions on Advanced Packaging, 2003, 26(1): 60-64.

    [5] [5] Tian Yingtao, Liu Changing, David Hutt, et al. Electrodeposition of indium for bump bonding[C]//Electronic Components and Technology Conference, 2008: 2096-2100.

    [6] [6] Kim H S, Plis E, et al. Improved performance of InAs/GaSb strained layer superlattice detectors with SU-8 passivation[J]. SPIE, 2009, 7467: 1-9.

    [8] [8] Huagn Qiuping, Wang Dongliang, et al. Analysis of the phenomenon of falling off of indium bumps from substrate during reflow process[C]//2010 11th International Conference on Electronic Packaging Technology & High Density Packaging, 2010: 267-270.

    [10] [10] Michale Quirk, Julian Serda. Semiconductor manufacturing technology[M]. Beijing: China Publishing House of Electronics Industry, 2015: 277-305.

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    GONG Zhi-hong, GAN Yu-mei, LIU Sen, LI Zhong-he, ZHANG Lei. Infrared detector electrode design[J]. Laser & Infrared, 2024, 54(7): 1076

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    Paper Information

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    Received: Nov. 7, 2023

    Accepted: Apr. 30, 2025

    Published Online: Apr. 30, 2025

    The Author Email:

    DOI:10.3969/j.issn.1001-5078.2024.07.011

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