Chinese Journal of Lasers, Volume. 9, Issue 8, 498(1982)

Dynamic interference effect of reflectance of ion-implanted Si by intense CO2 laser radiation

Li Tuanheng
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  • [in Chinese]
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    References(13)

    [1] [1] E. Е ш п ; Laser Effects in Ion Implantation Semiconductors, (Catania, 1978).

    [2] [2] S. D. Ferris et al.; Laser-Solid Interactions and Laser Piocessing, (Boston, 1978).

    [3] [3] C. L. Anderson et al.; Laser and Electron Processing of Electronic Materials (Electrochemical Society, Princeton, 1979).

    [4] [4] C. W. White et al.; Symposium A, Materials Research Society Meeting, 1979 (Academic, New York, 1980).

    [5] [5] A. Gat et al., Appl. Phys. Lett., 1978, 32, 276.

    [6] [6] . H. Auston et al.; Appl. Phys. Lett., 1978, 33, 539.

    [7] [7] J. S. Williams et at., Appl. Phys. Lett., 1978, 33,

    [8] [8] A. Gat et al.; J. Appl. Phys., 1979, 50, No. 4, 2926.

    [9] [9] J. W. Mayer et al.; Ion Implantation in Semiconductors Si and Ge (1970).

    [10] [10] G. L. Olson et al., Appl. Phys. Lett., 1980, 37, 1019.

    [11] [11] G. Dearnaley et al., Ion Implantation (1973).

    [12] [12] Helmut F. Wolf; Silicon Semiconductor Data (1969).

    [13] [13] M. Born et al.; Principles of Optics (1975).

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    Li Tuanheng. Dynamic interference effect of reflectance of ion-implanted Si by intense CO2 laser radiation[J]. Chinese Journal of Lasers, 1982, 9(8): 498

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    Paper Information

    Category: laser devices and laser physics

    Received: Aug. 17, 1981

    Accepted: --

    Published Online: Aug. 23, 2012

    The Author Email:

    DOI:

    CSTR:32186.14.

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