Cadmium zinc telluride (CZT) has excellent physical properties and can be used to prepare room-temperature nuclear radiation detectors and as substrate materials for mercury cadmium telluride infrared focal planes. Multiple methods can be used to grow CZT crystals, but the difficulty still lies in obtaining high monocrystal volume, low defect density single crystals. The traveling heater method (THM) is a major CZT crystal growth method, which has the advantages of low growth temperature, high single crystal yield, and good composition uniformity. A review was conducted on the growth of CZT crystals using the THM method, introducing its development history and related research results. Firstly, the basic principles and process flow of THM growth were introduced, followed by an explanation of the macroscopic morphology characteristics and key influencing factors during the growth process. Then, the correlation and suppression methods between Te inclusion defects and microscopic interface morphology were analyzed. Finally, the differences in Zn composition distribution between the THM method and the Bridgman method for CZT crystal growth were compared, highlighting the advantages of the THM method in macroscopic composition uniformity.