High-speed GeSn resonance cavity enhanced photodetectors for a 50 Gbps Si-based 2 μm band communication system

Jinlai Cui; Jun Zheng; Yupeng Zhu; Xiangquan Liu; Yiyang Wu; Qinxing Huang; Yazhou Yang; Zhipeng Liu; Zhi Liu; Yuhua Zuo; Buwen Cheng

doi:10.1364/PRJ.514764

Photonics Research, Volume. 12, Issue 4, 767(2024)

High-speed GeSn resonance cavity enhanced photodetectors for a 50 Gbps Si-based 2 μm band communication system Editors' Pick

Jinlai Cui^1,2, Jun Zheng^1,2、*, Yupeng Zhu^1,2, Xiangquan Liu^1,2, Yiyang Wu^1,2, Qinxing Huang^1,2, Yazhou Yang^1,2, Zhipeng Liu^1,2, Zhi Liu^1,2, Yuhua Zuo^1,2, and Buwen Cheng^1,2

Author Affiliations

¹Key Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

²Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

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Jinlai Cui, Jun Zheng, Yupeng Zhu, Xiangquan Liu, Yiyang Wu, Qinxing Huang, Yazhou Yang, Zhipeng Liu, Zhi Liu, Yuhua Zuo, Buwen Cheng, "High-speed GeSn resonance cavity enhanced photodetectors for a 50 Gbps Si-based 2 μm band communication system," Photonics Res. 12, 767 (2024)

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Paper Information

Category: Silicon Photonics

Received: Dec. 1, 2023

Accepted: Feb. 5, 2024

Published Online: Mar. 29, 2024

The Author Email: Jun Zheng (zhengjun@semi.ac.cn)

DOI:10.1364/PRJ.514764

CSTR:32188.14.PRJ.514764

Topics

laser devices and laser physics

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