Fig. 1. Irradiation damage (dpa) in V-4Cr-4Ti/Ti samples calculated by SRIM2008 software.由SRIM软件计算得到的V-4Cr-4Ti和Ti的辐照损伤随样品深度的变化

Fig. 2. The SEM morphology and EDS line analysis of V-4Cr-4Ti/Ti samples: (a) Before and (b) after irradiation; the positions of FIB samples are marked with white rectangles.V-4Cr-4Ti/Ti界面区域及两侧基体在(a) 辐照前和 (b) 辐照后的SEM形貌图及对应的EDS元素线扫描分析结果; 图中的白色长方形区域为FIB的取样位置

Fig. 3. Vickers hardness distribution across the interface of the V-4Cr-4Ti/Ti.V-4Cr-4Ti/Ti界面及两侧基体区域的硬度分布

Fig. 4. The TEM images of V-4Cr-4Ti/Ti after irradiation: (a) V-4Cr-4Ti; (b) interface I; (c) interface II; (d) Ti.V-4Cr-4Ti/Ti界面区域及两侧基体辐照后的TEM形貌图　(a) 钒基体; (b) 界面I; (c) 界面II; (d) 钛基体

Fig. 5. Dislocation density (a) and diameter (b) distribution across the interface.辐照后V-4Cr-4Ti/Ti界面及两侧基体的位错密度(a) 和尺寸 (b)

Fig. 6. STEM images of V-4Cr-4Ti/Ti interface after irradiation: (a) V-4Cr-4Ti; (b) interface I; (c) interface II.辐照后界面处的STEM形貌图　(a) 钒基体; (b) 界面I; (c) 界面II

Fig. 7. EDS analysis of the V-4Cr-4Ti/Ti: (a) Interface before irradiation; (b) V-4Cr-4Ti after irradiation; (c) interface I after irradiation; (d) interface II after irradiation.辐照前后析出物EDS分析结果　(a) 辐照前界面; (b) 辐照后钒基体; (c) 辐照后界面I; (d) 辐照后界面II

Fig. 8. EDS-mapping analysis of the V-4Cr-4Ti and interface I after irradiation: (a)−(d) V-4Cr-4Ti; (e)−(h) interface I.辐照后钒基体和界面I处析出物EDS面扫描分析结果　(a)—(d) 钒基体; (e)—(h) 界面I

Fig. 9. Diffraction analysis of irradiated samples: (a) V-4Cr-4Ti; (b) Ti; (c), (d) interface I; (e) (f) interface II.辐照后样品不同区域的选区电子衍射分析结果　(a) 钒基体; (b) 钛基体; (c), (d) 界面I; (e), (f) 界面II