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Chinese Journal of Lasers, Volume. 40, Issue 1, 106001(2013)

Effects of AlN Buffer Layer Thickness and Al Pre-Treatment on Properties of GaN/Si(111) Epilayer

Lian Ruikai1、*, Li Lin1, Fan Yaming2, Wang Yong1, Deng Xuguang2, Zhang Hui2, Feng Lei2, Zhu Jianjun2, and Zhang Baoshun2
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    Lian Ruikai, Li Lin, Fan Yaming, Wang Yong, Deng Xuguang, Zhang Hui, Feng Lei, Zhu Jianjun, Zhang Baoshun. Effects of AlN Buffer Layer Thickness and Al Pre-Treatment on Properties of GaN/Si(111) Epilayer[J]. Chinese Journal of Lasers, 2013, 40(1): 106001

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    Paper Information

    Category: materials and thin films

    Received: Jul. 30, 2012

    Accepted: --

    Published Online: Dec. 5, 2012

    The Author Email: Ruikai Lian (lianruikai@126.com)

    DOI:10.3788/cjl201340.0106001

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology