Journal of Semiconductors, Volume. 45, Issue 12, 122701(2024)
Displacement damage effects in MoS2-based electronics
[33] E Simoen, J M Rafi, A Mercha et al. Degradation of deep submicron partially depleted SOI CMOS transistors under MeV proton irradiation. Proceedings of the 18th Symposium on Microelectronics Technology and Devices-SBMICRO, 1, 1(2003).
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Kaiyue He, Zhanqi Li, Taotao Li, Yifu Sun, Shitong Zhu, Chao Wu, Huiping Zhu, Peng Lu, Xinran Wang, Maguang Zhu. Displacement damage effects in MoS2-based electronics[J]. Journal of Semiconductors, 2024, 45(12): 122701
Category: Research Articles
Received: Sep. 15, 2024
Accepted: --
Published Online: Jan. 15, 2025
The Author Email: Maguang Zhu (MGZhu)