Journal of Semiconductors, Volume. 45, Issue 12, 122701(2024)

Displacement damage effects in MoS2-based electronics

Kaiyue He1、†, Zhanqi Li1、†, Taotao Li, Yifu Sun, Shitong Zhu, Chao Wu, Huiping Zhu, Peng Lu, Xinran Wang, and Maguang Zhu*
Author Affiliations
  • School of Integrated Circuits, Nanjing University, Suzhou 215000, China
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    References(42)

    [33] E Simoen, J M Rafi, A Mercha et al. Degradation of deep submicron partially depleted SOI CMOS transistors under MeV proton irradiation. Proceedings of the 18th Symposium on Microelectronics Technology and Devices-SBMICRO, 1, 1(2003).

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    Kaiyue He, Zhanqi Li, Taotao Li, Yifu Sun, Shitong Zhu, Chao Wu, Huiping Zhu, Peng Lu, Xinran Wang, Maguang Zhu. Displacement damage effects in MoS2-based electronics[J]. Journal of Semiconductors, 2024, 45(12): 122701

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    Paper Information

    Category: Research Articles

    Received: Sep. 15, 2024

    Accepted: --

    Published Online: Jan. 15, 2025

    The Author Email: Maguang Zhu (MGZhu)

    DOI:10.1088/1674-4926/24090027

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