Laser & Optoelectronics Progress, Volume. 58, Issue 15, 1516021(2021)
Tunable Pulse Width Passively Q-Switched Nd∶YVO4 Laser Based on Graphene Devices
Fig. 1. Structure of the Gr-SA device. (a) Flow chart of the preparation; (b) SEM image
Fig. 2. Structure of the device electrode. (a) Distribution of the carriers; (b) SEM image of the device
Fig. 3. Characterization diagram of the Gr-SA device. (a) Raman spectrum; (b) transmission spectrum
Fig. 4. Optical absorption characteristics of Gr-SA devices. (a) Device with Gr; (b) device without Gr
Fig. 5. Non-linear transmission characteristics of the Gr-SA device. (a) Modulation voltage is 0 V; (b) modulation voltage is 60 V
Fig. 7. Performance test results of the laser. (a) Schematic diagram of the oscilloscope; (b) relationship between repetition frequency, pulse width and grid voltage; (c) pulse sequence; (d) single pulse diagram
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Jian Wang, Tengfei Dai, Haiyang Liu, Juntong Liu, Chunxia Kong, Zhenbo Yang, Jianhua Chang. Tunable Pulse Width Passively Q-Switched Nd∶YVO4 Laser Based on Graphene Devices[J]. Laser & Optoelectronics Progress, 2021, 58(15): 1516021
Category: Materials
Received: Nov. 22, 2020
Accepted: Jan. 19, 2021
Published Online: Aug. 6, 2021
The Author Email: Jianhua Chang (jianhuachang@nuist.edu.cn)