Fig. 1. Slab structure of graphene

Fig. 2. Change of graphene conductivity with frequency at different chemical potentials. (a) Real part; (b) imaginary part

Fig. 3. Dispersion of TE mode in a suspended graphene structure varies with frequency at different chemical potentials. (a) Effective refractive index neff; (b) Im(β/k0)

Fig. 4. Dispersion of TE mode varies with frequency in a two-layer dielectric structure as ε1=ε2 (the refractive indices of Si, SiC and SiO2 are 3.67, 2.57 and 1.53, respectively; μc=0.5 eV). (a) neff; (b) Im(β/k0)

Fig. 5. Dispersion of TE mode varies with frequency as ε1≈ε2 [ε1(SiO2)=2.3409; ε2(SiO2) are 2.3409, 2.3410, 2.3411, and 2.3412, respectively; μc=0.5 eV]. (a) neff; (b) Im(β/k0)

Fig. 6. Dispersion of TE mode varies with frequency in the waveguide with and without graphene in the interfaces a and b (n3=1.460, μc=0.5 eV). (a) neff; (b) Im(β/k0)

Fig. 7. Dispersion of TE mode varies with frequency for different dielectric constant n3 in substrate waveguide with and without graphene in the interface b (μc=0.5 eV). (a) neff; (b) Im(β/k0)

Fig. 8. Dispersion of TE mode varies with frequency at different chemical potentials of graphene in the interface b [μc(a)=0.2 eV, n3=1.460]. (a) neff; (b) Im(β/k0)