Journal of Semiconductors, Volume. 46, Issue 4, 042701(2025)

High carrier collection efficiency in graphene/GaAs heterojunction photodetectors

Baorui Fang1, Ye Tian2、*, and Zongmin Ma1、**
Author Affiliations
  • 1School of Mechanical Engineering, Dalian university, Dalian 116600, China
  • 2Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
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    References(36)

    [14] M Chhowalla, D Jena, H Zhang. Two-dimensional semiconductors for transistors. Nat Rev Mater, 1, 16052(2016).

    [35] H Wang. High gain single GaAs nanowire photodetector. Appl Phys Lett, 103, 093101(2013).

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    Baorui Fang, Ye Tian, Zongmin Ma. High carrier collection efficiency in graphene/GaAs heterojunction photodetectors[J]. Journal of Semiconductors, 2025, 46(4): 042701

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    Paper Information

    Category: Research Articles

    Received: Nov. 3, 2024

    Accepted: --

    Published Online: May. 21, 2025

    The Author Email: Ye Tian (YTian), Zongmin Ma (ZMMa)

    DOI:10.1088/1674-4926/24110002

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