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Journal of Synthetic Crystals, Volume. 53, Issue 3, 480(2024)

Dislocation Density Evolution Study of GaN Single Crystal Growth by Ammonothermal Method

XIA Zhenghui1,2, LI Tengkun1, REN Guoqiang1、*, XIE Kaihe1, LU Wenhao1, LI Shaozhe1,2, ZHENG Shunan1, GAO Xiaodong1, and XU Ke1,3,4
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  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
  • 4[in Chinese]
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    XIA Zhenghui, LI Tengkun, REN Guoqiang, XIE Kaihe, LU Wenhao, LI Shaozhe, ZHENG Shunan, GAO Xiaodong, XU Ke. Dislocation Density Evolution Study of GaN Single Crystal Growth by Ammonothermal Method[J]. Journal of Synthetic Crystals, 2024, 53(3): 480

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    Paper Information

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    Received: Nov. 9, 2023

    Accepted: --

    Published Online: Jul. 30, 2024

    The Author Email: Guoqiang REN (gqren2008@sinano.ac.cn)

    DOI:

    CSTR:32186.14.

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology