Infrared and Laser Engineering, Volume. 51, Issue 8, 20210761(2022)

Study on the time-resolved characteristics of the transmission-mode GaAs photocathode

Ming Han1,2, Xin Guo1,2, Hongjin Qiu1,2, Ruoyu Zhang1,2, Tiantian Jia1,2, Xuchuan Liu1,2, and Yixuan Hu1,2
Author Affiliations
  • 1Science and Technology on Low-Light-Lever Night Vision Laboratory, Xi'an 710059, China
  • 2Kunming Institute of Physics, Kunming 650223, China
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    [5] Wang Z H, Zhang Y J, Qian Y S, et al. UV–Vis–NIR broadband response of GaAs-based photocathode with multilayer graded-band cascade structure[J]. Superlattices and Microstructures, 156, 106957(2021).

    [6] [6] Jani H, Chen L, Duan L. Femtosecond pumpprobe study of negative electron affinity GaAsAlGaAs photocathodes [C]Ultrafast Phenomena & Nanophotonics XXII, Proceedings of SPIE, 2018, 10530: 105300X.

    [7] [7] Cerrito L. Scintillation Process Light Detects[M]. Berlin: Springer International Publishing, 2017.

    [8] [8] Jani H P, Zhou R, Zhang Y, et al. Pumpprobe study of ultrafast response of GaAs photocathodes grown by MOCVD MBE [C]Ultrafast Phenomena Nanophotonics XXIV, Proceedings of SPIE, 2020, 1278: 12780R.

    [9] Tang W D, Yang W Z, Cai Z P, et al. The time response of exponential doping NEA InGaAs photocathode applied to near infrared streak cameras[J]. Advanced Materials Research, 415-417, 1403-1406(2012).

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    Ming Han, Xin Guo, Hongjin Qiu, Ruoyu Zhang, Tiantian Jia, Xuchuan Liu, Yixuan Hu. Study on the time-resolved characteristics of the transmission-mode GaAs photocathode[J]. Infrared and Laser Engineering, 2022, 51(8): 20210761

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    Paper Information

    Category: Optical devices

    Received: Oct. 18, 2021

    Accepted: --

    Published Online: Jan. 9, 2023

    The Author Email:

    DOI:10.3788/IRLA20210761

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