Spectroscopy and Spectral Analysis, Volume. 42, Issue 4, 1179(2022)

Fine Photoluminescence Spectroscopic Characterization of Interfacial Effects on Emission Properties of InGaN/GaN Multiple Quantum Wells in a Blue-Light Laser Diode Structure

Tao WANG1、1; 2;, Jian-xun LIU2、2;, Xiao-tian GE2、2;, Rong-xin WANG2、2;, Qian SUN2、2;, Ji-qiang NING2、2; *;, and Chang-cheng ZHENG3、3; *;
Author Affiliations
  • 11. School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
  • 22. Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
  • 33. Division of Natural and Applied Sciences, Duke Kunshan University, Kunshan 215316, China
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    Tao WANG, Jian-xun LIU, Xiao-tian GE, Rong-xin WANG, Qian SUN, Ji-qiang NING, Chang-cheng ZHENG. Fine Photoluminescence Spectroscopic Characterization of Interfacial Effects on Emission Properties of InGaN/GaN Multiple Quantum Wells in a Blue-Light Laser Diode Structure[J]. Spectroscopy and Spectral Analysis, 2022, 42(4): 1179

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    Paper Information

    Category: Research Articles

    Received: Jan. 30, 2021

    Accepted: --

    Published Online: Jul. 25, 2023

    The Author Email:

    DOI:10.3964/j.issn.1000-0593(2022)04-1179-07

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