Acta Optica Sinica, Volume. 40, Issue 24, 2416001(2020)
Simulation on GaN/Si Single Heterojunction Solar Cells
Figures & Tables(9)
Fig. 2. Relationship between absorption coefficients of GaN and c-Si and wavelength
Fig. 3. Effect of doping concentration on battery characteristics. (a) Open circuit voltage; (b) short circuit current density; (c) fill factor; (d) conversion efficiency
Fig. 4. Effect of thickness on battery characteristics. (a) Open circuit voltage; (b) short circuit current density; (c) fill factor; (d) conversion efficiency
Fig. 5. Effect of temperature on battery characteristics. (a) Open circuit voltage; (b) short circuit current density; (c) fill factor; (d) conversion efficiency
Table 1. Parameters used to calculate carrier mobility of GaN [16]
View tableTable 1. Parameters used to calculate carrier mobility of GaN [16]
Carrier type μmin /(cm2·V-1·s-1) μmax /(cm2·V-1·s-1) Ng /cm-3 γ Electron(e) 55 1000 2×1017 1 Hole(h) 3 170 3×1017 2
Table 2. Simulation parameters for each layer[16-17]
View tableTable 2. Simulation parameters for each layer[16-17]
Parameter GaN Si Relative permittivity 8.90 11.90 Band gap /eV 3.42 1.12 Electron affinity /eV 4.16 4.05 Effective conduction band density /(1019 cm-3) 0.23 2.86 Effective valence band density /(1019 cm-3) 1.80 1.04 Electron mobility /(cm2·V-1·s-1) 325 1350 Hole mobility /(cm2·V-1·s-1) 47.21 500 Band tail density of state /(cm-3·eV-1) 1×1014 1×1014 Characteristic energy of donor-like and acceptor-like tails/eV 0.01 0.01 Capture cross section for acceptor states /cm2 1×10-17(e),1×10-15(h) 1×10-17(e),1×10-15(h) Capture cross section for donor states /cm2 1×10-15(e),1×10-17(h) 1×10-15(e),1×10-17(h)
Table 3. Parameters setting of GaN/Si solar cell
View tableTable 3. Parameters setting of GaN/Si solar cell
Parameter n-GaN p-Si Thickness /μm 0.005 16 Donor concentration /cm-3 5×1015-5×1018 0 Acceptor concentration /cm-3 0 5×1015-5×1019
Table 4. Parameter setting of solar cell
View tableTable 4. Parameter setting of solar cell
Parameter n-GaN p-Si Thickness /μm 0.005-0.500 0.500-500.000 Donor concentration /cm-3 5×1018 0 Acceptor concentration /cm-3 0 5×1019
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Aoshuang Wang, Qingquan Xiao, Hao Chen, Quan Xie. Simulation on GaN/Si Single Heterojunction Solar Cells[J]. Acta Optica Sinica, 2020, 40(24): 2416001
Paper Information
Category: Materials
Received: Aug. 20, 2020
Accepted: Sep. 24, 2020
Published Online: Dec. 3, 2020
The Author Email: Xiao Qingquan (qqxiao@gzu.edu.cn)
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