Direct bandgap photoluminescence from n-type indirect GaInP alloys

Cong Wang; Bing Wang; Riko I. Made; Soon-Fatt Yoon; Jurgen Michel

doi:10.1364/PRJ.5.000239

Photonics Research, Volume. 5, Issue 3, 239(2017)

Direct bandgap photoluminescence from n-type indirect GaInP alloys

Cong Wang^1,2, Bing Wang², Riko I. Made², Soon-Fatt Yoon^1,2, and Jurgen Michel^2,3、*

Author Affiliations

¹School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore

²Low Energy Electronic Systems, Singapore-MIT Alliance for Research and Technology, Singapore 138602, Singapore

³Department of Materials Science and Engineering, Massachusetts Institute of Technology, Massachusetts 02139, USA

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Cong Wang, Bing Wang, Riko I. Made, Soon-Fatt Yoon, Jurgen Michel, "Direct bandgap photoluminescence from n-type indirect GaInP alloys," Photonics Res. 5, 239 (2017)

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Paper Information

Category: Research Articles

Received: Jan. 30, 2017

Accepted: Mar. 27, 2017

Published Online: Oct. 9, 2018

The Author Email: Jurgen Michel (jmichel@mit.edu)

DOI:10.1364/PRJ.5.000239

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology