Fig. 1. (a) Epitaxial structure for QWI process; (b) final regrowth structure.

Fig. 2. Schematic diagram of P+ implantation QWI with etching implantation buffer layer. From left to right, P+ implantation, etch implantation buffer layer, and RTA process.

Fig. 3. PL peak shift as a function of anneal time of different samples.

Fig. 4. PL spectrum of laser and modulator regions.

Fig. 5. Optical microscope image of the fabricated device with section indications.

Fig. 6. L–I curves of as-grown FP laser, implanted FP laser, and EML without bias. Inset, optical spectrum of the device.

Fig. 7. Static ER and extinction efficiency as functions of bias voltage.

Fig. 8. Electrical-to-optical response of the fabricated EA modulator.