[1] [1] W. D. Laidig, N. Holonyak Jr., M. D. Camras et al.. Disorder of an AlAs-GaAs supperlattice by impurity diffusion. Appl. Phys. Lett., 1981, 38(10): 776~778

[2] [2] J. Werner, T. P. Lee, E. Kapon et al.. Single and double quantum well lasers with a monolithically integrated passive section. Appl. Phys. Lett., 1990, 57(8): 810~812

[3] [3] H. Ribot, K. W. Lee, R. J. Simes et al.. Disordering of GaAs/AlGaAs multiple quantum well structures by thermal annealing for monolithic integration of laser and phase modulator. Appl. Phys. Lett., 1989, 55(7): 672~674

[4] [4] L. J. Guido, K. C. Hsieh, N. Holonyak et al.. Impurity induced layer disordering of Si implanted AlxGa1-xAs-GaAs quantum well heterostrutures: Layer disordering via diffusion from extrinsic dislocation loops. J. Appl. Phys., 1987, 61(4): 1329~1334

[5] [5] I. Gontijo, T. Krauss, J. H. Marsh et al.. Postgrowth control of GaAs/AlGaAs quantum well shapes by impurity free vacancy diffusion. IEEE J. Quantum Electron., 1994, 30(5): 1189~1195

[6] [6] D. F. Welch, W. Streifer, R. L. Thornton et al.. 2.4 W CW, 770 nm laser arrays with nonabsorbing mirrors. Electron. Lett., 1987, 23(10): 525~527

[7] [7] J. Beauvais, J. H. Marsh, A. H. Kean et al.. Suppression of bandgap shift in GaAs/AlGaAs quantum well using strontium fluoride caps. Electron. Lett., 1992, 28(17): 1670~1672