Fig. 1. Transceiving chip’s structure.

Fig. 2. Transceiving chip’s reflection spectra: (a) the chip that transmits light at a wavelength around 850 nm and receives light at a wavelength around 805 nm; (b) the chip that transmits light at a wavelength around 805 nm and receives light at a wavelength around 850 nm.

Fig. 3. VCSEL unit’s static performance: (a) the chip that transmits light at a wavelength around 850 nm, where the simulated lasing wavelength is at 848.1 nm; (b) the chip that transmits light at a wavelength around 805 nm, where the simulated lasing wavelength is at 805.3 nm.

Fig. 4. PIN-PD unit’s photo-response performance upon the VCSEL unit’s output light power: (a) the chip that transmits light at a wavelength of 848.1 nm; (b) the chip that transmits light at a wavelength of 805.3 nm.

Fig. 5. Spectral photo-response performances of the integrated transceiving chips: (a) the chip that transmits light at a wavelength of 848.1 nm and receives light at a wavelength around 805 nm; (b) the chip that transmits light at a wavelength of 805.3 nm and receives light at a wavelength around 850 nm.

Fig. 6. Photo-response performances of the integrated transceiving chips with the input light intensity changing from 0 to 1000  W/cm2: (a) the chip that receives light at a wavelength of 805.3 nm; (b) the chip that receives light at a wavelength of 848.1 nm.

Fig. 7. Electrical isolation performances of the integrated transceiving chips represented by the analysis of the S21 parameter: (a) the AC signal applied on the VCSEL electrode; (b) the AC signal applied on the PIN-PD electrode.