Infrared and Laser Engineering, Volume. 46, Issue 12, 1204003(2017)
Temperature effect of InAlSb infrared detectors on photoelectric properties by molecular beam epitaxy
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Chen Gang, Li Mo, Lv Yanqiu, Zhu Xubo, Cao Xiancun. Temperature effect of InAlSb infrared detectors on photoelectric properties by molecular beam epitaxy[J]. Infrared and Laser Engineering, 2017, 46(12): 1204003
Paper Information
Category: 红外技术及应用
Received: Apr. 5, 2017
Accepted: May. 3, 2017
Published Online: Jan. 19, 2018
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