Position-Dependent Conductivity Transition by Intrinsic Defects in Cd<sub>1-x</sub<Zn<sub>x</sub>Te Crystal

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Infrared Technology, Volume. 44, Issue 6, 560(2022)

Position-Dependent Conductivity Transition by Intrinsic Defects in Cd_1-xxTe Crystal

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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Position-Dependent Conductivity Transition by Intrinsic Defects in Cd_1-xxTe Crystal[J]. Infrared Technology, 2022, 44(6): 560

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Paper Information

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Received: Mar. 25, 2021

Accepted: --

Published Online: Jul. 25, 2022

The Author Email: (1130494072@qq.com)

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Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology