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Chinese Optics Letters, Volume. 14, Issue 8, 083501(2016)

Corrigendum-influence of excitation power on temperature-dependent photoluminescence of phase-separated InGaN quantum wells

Haiyan Lü1, Yuanjie Lü2, Qiang Wang1, Jianfei Li1, Zhihong Feng2, Xiangang Xu3, and Ziwu Ji1
Author Affiliations
  • 1School of Physics, Shandong University, Jinan 250100, China
  • 2National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang 050051, China
  • 3Key Laboratory of Functional Crystal Materials and Device (Ministry of Education), Shandong University, Jinan 250100, China
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    [1] [1] H. Lü, Y. Lü, Q. Wang, J. Li, Z. Feng, X. Xu, and Z. Ji, Chin. Opt. Lett. 14, 042302 (2016).

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    Haiyan Lü, Yuanjie Lü, Qiang Wang, Jianfei Li, Zhihong Feng, Xiangang Xu, Ziwu Ji, "Corrigendum-influence of excitation power on temperature-dependent photoluminescence of phase-separated InGaN quantum wells," Chin. Opt. Lett. 14, 083501 (2016)

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    Paper Information

    Received: --

    Accepted: --

    Published Online: Aug. 4, 2016

    The Author Email:

    DOI:10.3788/col201614.083501

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology