[1] [1] TANAKA M, TAGUCHI M, MATSUYAMA T, et al. Development of new a-Si/c-Si heterojunction solar cells: ACJ-HIT (artificially constructed junction-heterojunction with intrinsic thin-layer)［J］. Japanese Journal of Applied Physics, 1992, 31(11R): 3518.

[2] [2] LIN H, YANG M, RU X N, et al. Silicon heterojunction solar cells with up to 26.81% efficiency achieved by electrically optimized nanocrystalline-silicon hole contact layers［J］. Nature Energy, 2023, 8(8): 789-799.

[4] [4] BIVOUR M, SCHRER S, HERMLE M, et al. Silicon heterojunction rear emitter solar cells: less restrictions on the optoelectrical properties of front side TCOs［J］. Solar Energy Materials and Solar Cells, 2014, 122: 120-129.

[5] [5] KHOKHAR M Q, HUSSAIN S Q, KIM S, et al. Review of rear emitter silicon heterojunction solar cells［J］. Transactions on Electrical and Electronic Materials, 2020, 21(2): 138-143.

[6] [6] TAGUCHI M, TERAKAWA A, MARUYAMA E, et al. Obtaining a higher Voc in HIT cells［J］. Progress in Photovoltaics: research and applications, 2005, 13(6): 481-488.

[7] [7] MADANI O, VON MAYDELL K, AGERT C. Enhanced passivation at amorphous/crystalline silicon interface and suppressed Schottky barrier by deposition of microcrystalline silicon emitter layer in silicon heterojunction solar cells［J］. Applied Physics Letters, 2014, 104(11): 113901-113912.

[9] [9] BIVOUR M, REICHEL C, HERMLE M, et al. Improving the a-Si∶H(p) rear emitter contact of n-type silicon solar cells［J］. Solar Energy Materials and Solar Cells, 2012, 106: 11-16.

[10] [10] HUANG H B, TIAN G Y, WANG T, et al. Analysis of the double-layer α-Si∶H emitter with different doping concentrations for α-Si∶H/c-Si heterojunction solar cells［J］. Frontiers in Energy, 2017, 11(1): 92-95.

[12] [12] INOUE T, TANAKA T, KONAGAI M, et al. Electronic and optical properties of p-type amorphous silicon and wide band-gap amorphous silicon carbide films prepared by photochemical vapor deposition［J］. Applied Physics Letters, 1984, 44(9): 871-873.

[13] [13] COLLINS R W. In situ study of p-type amorphous silicon growth from B2H6∶SiH4 mixtures: surface reactivity and interface effects［J］. Applied Physics Letters, 1988, 53(12): 1086-1088.