[1] [1] Eiichi Sano. A device model for metal-semiconductor-metal photodetectors and its applications to optoelectronic integrated circuit simulation [J]. IEEE Trans. on ED., 1990, 37(9):1964～1968

[2] [2] Nikhil Ranjan Das, P. K. Basu, M. Jamal Deen. A new approach to the design optimization of HEMT and HBT for maximum gain-bandwidth of MSM-based integrated photoreceiver and its noise performance at 1.55 μm [J]. IEEE Trans. on ED., 2000, 47(11):2101～2109

[4] [4] Andrew Xiang, Walter Wohlmuth, Patrick Pay et al.. Modeling of InGaAs MSM photodetector for circuit-level simulation [J]. J. Lightwave Technol., 1996, 14(5):716～723

[6] [6] E. Holger Bottcher, Detlef Kuhl, Frank Hieronymi et al.. Ultrafast semiinsulating InP:Fe-InGaAs:Fe-InP:Fe MSM photodetectors: modeling and performance [J]. IEEE J. Quantum Electron., 1992, 28(10):2343～2357

[7] [7] M. Shur. Physics of Semiconductor Devices [M]. Prentice-Hall International. Inc.,1990. Chap.1

[10] [10] John J. Barnes, Ronald J. Lomax, George I. Haddad. Finite-element simulation of GaAs MESFET′s with lateral doping profiles and submicron gates [J]. IEEE Trans. on ED., 1976, 23(9):1042～1048

[12] [12] Waclaw C. Koscielniak, Jean-Luc Pelouard, Robert M. Kolbas et al.. Dark current characteristics of GaAs metal-semiconductor-metal(MSM) photodetectors [J]. IEEE Trans. on ED., 1990, 37(7):1623～1629

[13] [13] S. M. Sze. Physics of Semiconductor Device [M]. 2nd Edition. New York: Wiley, 1981. Chap.5