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Semiconductor Optoelectronics, Volume. 46, Issue 2, 255(2025)

Simulation Study of Deep Trench Semi-Superjunction VDMOS Device

LI Yao, GOU Henglu, CHEN Lihuan, NIU Ruixia, CHEN Wenshu, LONG Yi, and BAI Kailiang
Author Affiliations
  • School of Electronic and Information Engineering, Lanzhou Jiaotong University, Lanzhou 730070, CHN
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    LI Yao, GOU Henglu, CHEN Lihuan, NIU Ruixia, CHEN Wenshu, LONG Yi, BAI Kailiang. Simulation Study of Deep Trench Semi-Superjunction VDMOS Device[J]. Semiconductor Optoelectronics, 2025, 46(2): 255

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    Received: Dec. 5, 2024

    Accepted: Sep. 18, 2025

    Published Online: Sep. 18, 2025

    The Author Email:

    DOI:10.16818/j.issn1001-5868.20241205001

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology