Acta Physica Sinica, Volume. 69, Issue 13, 137801-1(2020)

Field effect transistor photodetector based on two dimensional SnSe2

Xian-Cheng Meng, He Tian, Xia An, Shuo Yuan, Chao Fan*, Meng-Jun Wang, and Hong-Xing Zheng
Author Affiliations
  • School of Electronic and Information Engineering, Hebei University of technology, Tianjin 300401, China
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    Figures & Tables(8)
    (a) Diagram of CVT; (b) SnSe2 single crystal; (c) Diagram of graph transfer method.
    (a) XRD spectrum and (b) TEM image of SnSe2.
    XPS spectrum of SnSe2.
    (a) AFM of sample; (b) Optical micro-image of sample.
    Raman spectrum of sample.
    (a) Output characteristic of the field effect transistor based on two-dimensional SnSe2; (b) Transfer characteristic of the field effect transistor.
    I-V curve: (a) 405 nm; (b) 532 nm; (c) 650 nm. Photocurrent curve: (d) 405 nm; (e) 532 nm; (f) 650 nm. Rising edge and falling edge: (g) 405 nm; (h) 532 nm; (i) 650 nm.
    Light response curve: (a) 405 nm; (b) 532 nm; (c) 650 nm. Responsivity and detectivity scatter plot of device: (d) 405 nm; (e) 532 nm; (f)650 nm.
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    Xian-Cheng Meng, He Tian, Xia An, Shuo Yuan, Chao Fan, Meng-Jun Wang, Hong-Xing Zheng. Field effect transistor photodetector based on two dimensional SnSe2[J]. Acta Physica Sinica, 2020, 69(13): 137801-1

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    Paper Information

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    Received: Dec. 24, 2019

    Accepted: --

    Published Online: Jan. 4, 2021

    The Author Email:

    DOI:10.7498/aps.69.20191960

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