Enhanced efficiency of high-speed Si and Si-based PbSe MSM photodiodes with integrated photon-trapping holes at 800–1550 nm wavelengths

Lixin Liu; Jun Gou; Chunyu Li; Jiayue Han; Xiutao Yang; Jin Chen; Zijian Zhang; Zheyuan Xie; He Yu; Zhiming Wu; Jun Wang

doi:10.3788/COL202422.101301

Chinese Optics Letters, Volume. 22, Issue 10, 101301(2024)

Enhanced efficiency of high-speed Si and Si-based PbSe MSM photodiodes with integrated photon-trapping holes at 800–1550 nm wavelengths

Lixin Liu¹, Jun Gou^1,2,3、*, Chunyu Li¹, Jiayue Han¹, Xiutao Yang¹, Jin Chen¹, Zijian Zhang¹, Zheyuan Xie¹, He Yu^1,2, Zhiming Wu^1,2, and Jun Wang^1,2

Author Affiliations

¹School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China

²State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

³Key Laboratory of Science and Technology on Infrared Detector, Luoyang 471099, China

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Lixin Liu, Jun Gou, Chunyu Li, Jiayue Han, Xiutao Yang, Jin Chen, Zijian Zhang, Zheyuan Xie, He Yu, Zhiming Wu, Jun Wang, "Enhanced efficiency of high-speed Si and Si-based PbSe MSM photodiodes with integrated photon-trapping holes at 800–1550 nm wavelengths," Chin. Opt. Lett. 22, 101301 (2024)

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Paper Information

Category: Integrated Optics

Received: Apr. 17, 2024

Accepted: May. 21, 2024

Published Online: Oct. 17, 2024

The Author Email: Jun Gou (goujun@uestc.edu.cn)

DOI:10.3788/COL202422.101301

CSTR:32184.14.COL202422.101301

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology