The thermal-mechanical damage induced by high current pulsed electron beam striking on anode targets is a key factor affecting the stability and lifetime of high current diodes. This problem is mostly addressed by replacing the anode target and cleaning the cavity and cathode to ensure the normal operation of the diode. In this paper, a diode anode target temperature and thermal deformation simulation method is established using the energy deposition profile of the electron beam in the target as a bridge. The method can be used to determine the temperature distribution and thermal deformation of the target under various diode operating conditions, provide basic data for the investigation of thermal-mechanical damage to the target, and provide technical support for diode configuration design and life enhancement. With application of this method to the “Qiangguang-I” accelerator, the simulation results show that the surface temperature of the target can reach 5500-6000 ℃ and the thermal deformation can reach about 4.5 mm when the ion density is more than 10¹⁴ cm^-3 (tight-pinched). The temperature is about 4500 ℃ and the thermal deformation is 2.8-3.2 mm when there is no ion flow (weak-pinched).