Photonics Research, Volume. 13, Issue 4, 1028(2025)
Tracking and manipulating ultrafast photocarrier dynamics in 3D Dirac semimetal Cd3As2 by chemical doping
Fig. 1. EDS mapping of Zn element distribution in (a) lightly doped (
Fig. 2. Pump-fluence-dependent differential THz transmission,
Fig. 3. (a) Temperature-dependent transient THz transmission response of the heavily doped alloy, excited at a fixed pump fluence of
Fig. 4. Schematics for relaxation dynamics of photoexcited carriers near the Fermi level in (a) Dirac semimetal phase and (b) trivial semiconductor phase. It should be noted that the relaxation of holes in (b) is similar to that of electrons.
Fig. 5. Normalized THz differential transmission responses at various temperatures under a fixed pump fluence of
Fig. 6. Calculated electronic band structure of 0.31-Zn-doped
Fig. 7. Transmitted THz time-domain signals of the heavily doped
Fig. 8. Complex THz photoconductivity dispersion and Drude-Smith model fitting under (a) various pump fluences at a delay time of 1 ps and (b) various delay times at
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Peng Suo, Wenjie Zhang, Yunkun Yang, Long Geng, Chen Wang, Kaiwen Sun, Xian Lin, Li-Ping Lv, Lei Qiao, Faxian Xiu, Guohong Ma, "Tracking and manipulating ultrafast photocarrier dynamics in 3D Dirac semimetal Cd3As2 by chemical doping," Photonics Res. 13, 1028 (2025)
Category: Spectroscopy
Received: Oct. 8, 2024
Accepted: Jan. 17, 2025
Published Online: Mar. 31, 2025
The Author Email: Guohong Ma (ghma@staff.shu.edu.cn)
CSTR:32188.14.PRJ.544166