Chinese Journal of Lasers, Volume. 30, Issue 7, 593(2003)

Investigation of Electricity Property of GaAs/AlGaAs Heterostructure Material Influenced by FEL

[in Chinese]1、*, [in Chinese]1, [in Chinese]1, [in Chinese]2, and [in Chinese]2
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  • 1[in Chinese]
  • 2[in Chinese]
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    References(5)

    [3] [3] W. Xu. Self-consistent electronic subband structure in terahertz-driven two-dimensional electron gases [J]. Europhysics Letters, 1997, 40(4):411~416

    [4] [4] T. J. Green, W. Xu. Population inversion in an optically pumped single quantum well [J]. J. Appl. Phys., 2000, 88(6):3166~3169

    [5] [5] A. G. Markelz, N. G. Asmar, B. Brar et al.. Interband impact ionization by terahertz illumination of InAs heterostructures [J]. Appl. Phys. Lett., 1996, 69(26):3975~3977

    [6] [6] P. S. S. Guimaraes, Brian J. Keay, Jann P. Kaminski et al.. Photon-mediated sequential resonant tunneling in intense terahertz electric fields [J]. Phys. Rev. Lett., 1993, 70(24):3792~3795

    [7] [7] Xia Jianbai, Zhu Bangfen. Semiconductor Superlattice Physics [M]. Shanghai: Shanghai Science and Technology Press, 1995. 452 (in Chinese)

    CLP Journals

    [1] Chen Liang, Qian Yunsheng, Chang Benkang, Zhang Yijun. Research on Surface Photovoltage Spectroscopy for Exponential Doping Transmission-Mode GaAs Photocathodes[J]. Chinese Journal of Lasers, 2011, 38(9): 906002

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Investigation of Electricity Property of GaAs/AlGaAs Heterostructure Material Influenced by FEL[J]. Chinese Journal of Lasers, 2003, 30(7): 593

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    Paper Information

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    Received: Apr. 4, 2002

    Accepted: --

    Published Online: Jun. 27, 2006

    The Author Email: (chinesezm@sina.com)

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