[2] [2] Zhang Liwen, et al. Modeling and stress analysis of large format InSb focal plane arrays detector under thermal shock[J]. Infrared Physics & Technology, 2013, (60): 29-34.

[3] [3] P Hautojarvi. Positron annihilation spectroscopy of defects in solids[J]. Materials Research Society, 1987, (82): 3-21.

[6] [6] F Tuomisto, et al. Characterization of bulk AlN crystals with positron annihilation spectroscopy[J]. Journal of Crystal Growth, 2008, (310): 3998-4001.

[7] [7] M R M Elsharkawy. Characterization of point defects in CdTe by positron annihilation spectroscopy[J]. Applied Physics Letters, 2016, 108(24): 1-5.

[8] [8] Soubhik Chattopadhyay, et al. Defects dynamics in annealed Si3N4 by positron annihilation spectroscopy[J]. Phys. Status Solidi, 2009, C6(11): 2533-2536.

[12] [12] W Brand, R Paulin. Positron implantation-profile effects in solid[J]. Physical Review B.1977, 15(5): 2511-2518.

[17] [17] Kauppinen H, Corbel C, J Nissil, et al. Photoionization of the silicon divacancy studied by positron-annihilation spectroscopy[J]. Physical Review B, 1998, 52(20): 911-922.

[20] [20] Voronkov V V. The mechanism of swirl defects formation in silicon[J]. Journal of Crystal Growth, 1982, 59(3): 625-643.

[23] [23] Ian R. Grant. Progress in III-V materials technology[C]//Optical Materials in Defence Systems Technology, Bellingham, 2004.