The electrical properties of indium antimonide crystal material are a key factor affecting the performance of the final infrared detector. Impurities within the material as well as point defects, especially vacancy defects, can greatly affect the electrical properties of materials, and sometimes even lead to material inversion. In this paper, the vacancy defects in indium antimonide crystal materials are investigated using positron annihilation spectroscopy and the positron annihilation lifetimes of different crystal growth pull rates and conductive types of crystal growth rate are also analyzed. The results show that its internal mainly V_In type vacancy defects and within a certain range of pulling rate, the positron annihilation lifetime basically unchanged, in addition to the vacancy defects are not the main cause of the N-type indium antimonide crystal material conductivity type inversion.