Chinese Optics Letters, Volume. 17, Issue 6, 061403(2019)
12 W high power InGaAsP/AlGaInP 755 nm quantum well laser
Fig. 2. (a) Calculated near-field distribution in the vertical direction, fundamental mode only. The confinement factor
Fig. 3. (a)
Fig. 4. Lifetime test with one single emitter under CW 12 A bias and 40°C.
Fig. 5. (a) Vertical (fast axis) far-field angular divergence. (b) Horizontal (slow axis) far-field angular divergence.
Fig. 6. Measured natural logarithm of threshold and slope efficiency as functions of absolute temperature. The slope of fitted lines corresponds to the inverse of
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H. Martin Hu, Jianyang Zhao, Weimin Wang, James Ho, Langxing Kuang, Wenbin Liu, "12 W high power InGaAsP/AlGaInP 755 nm quantum well laser," Chin. Opt. Lett. 17, 061403 (2019)
Category: Lasers and Laser Optics
Received: Jan. 21, 2019
Accepted: Mar. 14, 2019
Published Online: Jun. 12, 2019
The Author Email: Wenbin Liu (liuwenbin@raybowlaser.com)