Chinese Optics Letters, Volume. 3, Issue 0s, 246(2005)

Research of strain state and dislocation density in the multiple AlGaN epitaxial layers with high Al content

[in Chinese], [in Chinese], and [in Chinese]
Author Affiliations
  • Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083
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    References(9)

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    [in Chinese], [in Chinese], [in Chinese], "Research of strain state and dislocation density in the multiple AlGaN epitaxial layers with high Al content," Chin. Opt. Lett. 3, 246 (2005)

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    Published Online: Mar. 5, 2007

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