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Laser Technology, Volume. 48, Issue 6, 799(2024)

Research progress on GaAs-based near-infrared tapered semiconductor lasers

LYU Mengyao1,2,3, WANG Haomiao1,2、*, HE Yuwen1,2, ZHOU Zhiyu1,2, SONG Liang1,2,3, DU Weichuan1,2, WU Deyong1,2, and TANG Chun1,2
Author Affiliations
  • 1The Key Laboratory of Science and Technology on High Energy Laser, China Academy of Engineering Physics, Mianyang 621900, China
  • 2Institute of Applied Electronics, China Academy of Engineering Physics, Mianyang 621900, China
  • 3Graduate School of China Academy of Engineering Physics, Beijing 100088, China
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    LYU Mengyao, WANG Haomiao, HE Yuwen, ZHOU Zhiyu, SONG Liang, DU Weichuan, WU Deyong, TANG Chun. Research progress on GaAs-based near-infrared tapered semiconductor lasers[J]. Laser Technology, 2024, 48(6): 799

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    Paper Information

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    Received: Feb. 22, 2024

    Accepted: Feb. 13, 2025

    Published Online: Feb. 13, 2025

    The Author Email: WANG Haomiao (hao_miao_wang@163.com)

    DOI:10.7510/jgjs.issn.1001-3806.2024.06.004

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology