Effect of Rapid Thermal Annealing on Luminescence Properties of InGaAsSb/AlGaAsSb Multiple Quantum Wells Material

Lin Shen; Jilong Tang; Huimin Jia; Dengkui Wang; Dan Fang; Xuan Fang; Fengyuan Lin; Zhipeng Wei

doi:10.3788/CJL202148.0711001

Chinese Journal of Lasers, Volume. 48, Issue 7, 0711001(2021)

Effect of Rapid Thermal Annealing on Luminescence Properties of InGaAsSb/AlGaAsSb Multiple Quantum Wells Material

Lin Shen, Jilong Tang^*, Huimin Jia^**, Dengkui Wang, Dan Fang, Xuan Fang, Fengyuan Lin, and Zhipeng Wei

State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology, Changchun, Jilin 130022, China

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Lin Shen, Jilong Tang, Huimin Jia, Dengkui Wang, Dan Fang, Xuan Fang, Fengyuan Lin, Zhipeng Wei. Effect of Rapid Thermal Annealing on Luminescence Properties of InGaAsSb/AlGaAsSb Multiple Quantum Wells Material[J]. Chinese Journal of Lasers, 2021, 48(7): 0711001

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Paper Information

Category: spectroscopy

Received: Sep. 15, 2020

Accepted: Oct. 29, 2020

Published Online: Apr. 21, 2021

The Author Email: Tang Jilong (jl_tangcust@163.com), Jia Huimin (huiminjia01@163.com)

DOI:10.3788/CJL202148.0711001

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology