Photonics Research, Volume. 5, Issue 2, 124(2017)

Electrical nonlinearity in silicon modulators based on reversed PN junctions

Sheng Yu1 and Tao Chu1,2、*
Author Affiliations
  • 1State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 2College of Information Science and Electronic Engineering, Zhejiang University, #38, Zheda Road, Hangzhou 310027, China
  • show less
    References(19)

    [8] T. Chu, X. Xiao, H. Xu, X. Li, Z. Li, J. Yu, Y. Yu. High-speed silicon modulators. 39th European Conference and Exhibition on Optical Communication (ECOC), 1-3(2013).

    [17] J. C. Pedro, N. B. Carvalho. Intermodulation Distortion in Microwave and Wireless Circuits(2002).

    [18] S. L. Chuang. Physics of Optoelectronic Devices(1995).

    CLP Journals

    [1] Weibao He, Mingyu Tong, Zhongjie Xu, Yuze Hu, Xiang’ai Cheng, Tian Jiang, "Ultrafast all-optical terahertz modulation based on an inverse-designed metasurface," Photonics Res. 9, 1099 (2021)

    Tools

    Get Citation

    Copy Citation Text

    Sheng Yu, Tao Chu, "Electrical nonlinearity in silicon modulators based on reversed PN junctions," Photonics Res. 5, 124 (2017)

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category: Silicon Photonics

    Received: Oct. 13, 2016

    Accepted: Feb. 13, 2017

    Published Online: Sep. 26, 2018

    The Author Email: Tao Chu (chutao@zju.edu.cn)

    DOI:10.1364/PRJ.5.000124

    Topics