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Infrared and Laser Engineering, Volume. 44, Issue 10, 3010(2015)

Design and calculation of absorption layer thickness on InP/InGaAs transferred-electron photocathode

Ren Bin1,2,3, Shi Feng1,2, Guo Hui1,2, Jiao Gangcheng1,2, Hu Canglu1,2, Cheng Wei1,2, Xu Xiaobing1,2, and Wang Shufei1,2
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  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    Ren Bin, Shi Feng, Guo Hui, Jiao Gangcheng, Hu Canglu, Cheng Wei, Xu Xiaobing, Wang Shufei. Design and calculation of absorption layer thickness on InP/InGaAs transferred-electron photocathode[J]. Infrared and Laser Engineering, 2015, 44(10): 3010

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    Paper Information

    Category: 光电器件与材料

    Received: Feb. 11, 2015

    Accepted: Mar. 3, 2015

    Published Online: Jan. 26, 2016

    The Author Email:

    DOI:

    CSTR:32186.14.

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology