Fig. 1. （a）horizontal lift， （b）vertical immersion^［48］

Fig. 2. Schematic diagram of carbon nanotube films prepared by different angle stretching ^［52］

Fig. 3. （a）device diagram， （b） reaction photos of hollow carbon nanotube cylinders blown from carbon nanotubes， （c）the entire carbon nanotube film removed from the substrate， （d）cut small pieces of carbon nanotube film^［57］

Fig. 4. （a）-（c） Macro and micro morphology of the prepared carbon nanotube film， （d） a schematic diagram of a device designed to synthesize， deposit， and transfer SWCNTS films， （e）carbon nanotube film on simple substrate^［63］

Fig. 5. Fabrication and characterization of wafer-scale monodomain films of aligned CNTs （a） A CNT suspension goes through a standard vacuum filtration system. For spontaneous CNT alignment to occur， the filtration speed must be kept low and the CNTs must be well dispersed in the suspension， （b） A wafer-scale， uniform CNT film is formed on the filter membrane， （c）Optical image of the produced film after being transferred to a transparent substrate by dissolving the filter membrane， （d）a high-resolution SEM image， （e） and a top-view TEM image^［76］

Fig. 6. Schematic diagram of layer by layer self-assembly of MWCNTs with negative charge^［85］

Fig. 7. （a）-（c） Carbon nanotube optical and SEM microscopic images， （d）device preparation process and schematic diagram，（e）schematic diagram of device testing，^［91］

Fig. 8. （a）-（b） are the respective current-voltage characteristics of bolometer and PTE devices under darkness and illuminated conditions.

Fig. 9. Schematics of the （a） millimeter-scale and （b） micrometer-scale CNT-based photodetector ^［96］

Fig. 10. （a） suspended SWCNTs films with a thickness of 140nm， Al/Au electrode gap is 3.9mm； （b） photothermoeletric detector with p-n doping ^［110］

Fig. 11. （a） The current-voltage characteristics of the photoconductive detector with or without light， （b） the current-voltage characteristics of the photodiode detector with or without light， （c） the current-voltage characteristics of the phototransistor with or without light

Fig. 12. Flexible and fully transparent photodetector based on porphyrin-SWNT-graphene heterostructure. （a）Schematic showing the fabricationof graphene electrodes， SWNT networks， and porphyrin layer on plastic substrate， （b）SEM image of boundary between graphene electrode and PET substrate after porphyrin functionalization. The SWNTs， covered by porphyrin molecules， are coated uniformly on the both graphene and PETsubstrate， （c）-（d） Photographs of as-fabricated photodetector exhibiting high transparency and flexibility^［137］

Fig. 13. （a） Schematic diagram of graphene/s-SW CNTs cross-shaped photodiode， （b） optical image， （c） Raman spectroscopy of s-SWCNT film in radial stretching mode before and after， （d） graphene/s-SWCNT AFM image of film overlap area^［138］

Fig. 14. （a） Schematic diagram of graphene s-SWCNTs heterostructure photocell and test circuit， （b） optical image of AS manufacturing device^［151］

Fig. 15. Schemes for the fabrication of the （PEA）₂SnI₄/semi-CNT hybrid TFTs^［166］