Journal of Semiconductors, Volume. 42, Issue 5, 052001(2021)
A crossover from Efros–Shklovskii hopping to activated transport in a GaAs two-dimensional hole system at low temperatures
Fig. 1. Adjustment of conductivity dependence of temperature for 2D p-GaAs system sample for different carrier densities.
Fig. 2. ln(σ) as (a)
Fig. 4. ln
Fig. 6. (a) Activation energy versus
Get Citation
Copy Citation Text
S. Dlimi, A. El kaaouachi, L. Limouny, B. A. Hammou. A crossover from Efros–Shklovskii hopping to activated transport in a GaAs two-dimensional hole system at low temperatures[J]. Journal of Semiconductors, 2021, 42(5): 052001
Category: Articles
Received: Sep. 1, 2020
Accepted: --
Published Online: Jun. 17, 2021
The Author Email: