Journal of Semiconductors, Volume. 42, Issue 5, 052001(2021)

A crossover from Efros–Shklovskii hopping to activated transport in a GaAs two-dimensional hole system at low temperatures

S. Dlimi1, A. El kaaouachi1,2, L. Limouny1, and B. A. Hammou2
Author Affiliations
  • 1Physics Department, Faculty of Sciences, Ibn Zohr University, BP 8106, Hay Dakhla, 80000 Agadir, Morocco
  • 2Materials and Physicochemistry of the Atmosphere and Climate Group, Faculty of Sciences, Ibn Zohr University, BP 8106, 80000 Agadir, Morocco
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    Figures & Tables(6)
    Adjustment of conductivity dependence of temperature for 2D p-GaAs system sample for different carrier densities.
    ln(σ) as (a) T–1/2, (b) T–1/3 and (c) T–1 of the sample and linear fits where the prefactor σ0 is independent on temperature.
    Function lnW versus lnT for various densities.
    lnW as a function lnT and linear fits for both cases: T Tc and T > Tc.
    The exponent p as a function of carrier densities.
    (a) Activation energy versus np in the insulating phase. (b) Characteristic temperature for case of Efros-Shklovskii and Mott hopping.
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    S. Dlimi, A. El kaaouachi, L. Limouny, B. A. Hammou. A crossover from Efros–Shklovskii hopping to activated transport in a GaAs two-dimensional hole system at low temperatures[J]. Journal of Semiconductors, 2021, 42(5): 052001

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    Paper Information

    Category: Articles

    Received: Sep. 1, 2020

    Accepted: --

    Published Online: Jun. 17, 2021

    The Author Email:

    DOI:10.1088/1674-4926/42/5/052001

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