A lateral AlGaN/GaN Schottky barrier diode with 0.36-V turn-on voltage and 10-kV breakdown voltage by using double-barrier anode structure

Ru Xu; Peng Chen; Xiancheng Liu; Jianguo Zhao; Tinggang Zhu; Dunjun Chen; Zili Xie; Jiandong Ye; Xiangqian Xiu; Fayu Wan; Jianhua Chang; Rong Zhang; Youdou Zheng

doi:10.1016/j.chip.2023.100079

Chip, Volume. 3, Issue 1, 100079(2024)

A lateral AlGaN/GaN Schottky barrier diode with 0.36-V turn-on voltage and 10-kV breakdown voltage by using double-barrier anode structure

Ru Xu^1,2, Peng Chen^1、*, Xiancheng Liu¹, Jianguo Zhao², Tinggang Zhu³, Dunjun Chen¹, Zili Xie¹, Jiandong Ye¹, Xiangqian Xiu¹, Fayu Wan², Jianhua Chang², Rong Zhang^1、**, and Youdou Zheng^1、***

Author Affiliations

¹The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China

²School of Electronic and Information Engineering, Nanjing University of Information Science and Technology, Nanjing 210044, China

³Corenergy Semiconductor Incorporation, Suzhou 215600, China

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Ru Xu, Peng Chen, Xiancheng Liu, Jianguo Zhao, Tinggang Zhu, Dunjun Chen, Zili Xie, Jiandong Ye, Xiangqian Xiu, Fayu Wan, Jianhua Chang, Rong Zhang, Youdou Zheng. A lateral AlGaN/GaN Schottky barrier diode with 0.36-V turn-on voltage and 10-kV breakdown voltage by using double-barrier anode structure[J]. Chip, 2024, 3(1): 100079

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Paper Information

Category: Research Articles

Received: Aug. 16, 2023

Accepted: Dec. 11, 2023

Published Online: Jan. 23, 2025

The Author Email: Peng Chen (pchen@nju.edu.cn), Rong Zhang (rzhang@nju.edu.cn), Youdou Zheng (ydzheng@nju.edu.cn)

DOI:10.1016/j.chip.2023.100079

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology