Mode-switching single-pixel imaging via a high-performance perovskite-Si dual-mode photodetector

Yujin Liu; Dongxu Lin; Jingyang Xing; Hanyan Zhao; Hongling Wan; Hao Wang; Zhong Ji; Xueli Chen

doi:10.1364/PRJ.530675

Photonics Research, Volume. 12, Issue 12, 2873(2024)

Mode-switching single-pixel imaging via a high-performance perovskite-Si dual-mode photodetector Editors' Pick

Yujin Liu^1、†, Dongxu Lin^2、†, Jingyang Xing¹, Hanyan Zhao¹, Hongling Wan¹, Hao Wang¹, Zhong Ji^1,3,4、*, and Xueli Chen^1,3,5、*

Author Affiliations

¹Innovation Center for Advanced Medical Imaging and Intelligent Medicine, Guangzhou Institute of Technology, Xidian University, Guangzhou 510555, China

²Shenzhen Key Laboratory of Intelligent Robotics and Flexible Manufacturing Systems, Department of Mechanical and Energy Engineering, SUSTech Energy Institute for Carbon Neutrality, Southern University of Science and Technology, Shenzhen 518055, China

³Center for Biomedical-Photonics and Molecular Imaging, Advanced Diagnostic-Therapy Technology and Equipment Key Laboratory of Higher Education Institutions in Shaanxi Province, School of Life Science and Technology, Xidian University, Xi’an 710126, China

⁴e-mail: jizhong@xidian.edu.cn

⁵e-mail: xlchen@xidian.edu.cn

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Figures & Tables(6)

Fig. 1. Design of the PVK-Si dual-mode PD. (a) Fabrication process of the PVK-Si PD via the thermal evaporation method. During operation, the mask is tightly attached to the silicon. (b) Schematic of the device structure designed to support both top and bottom illumination modes. (c) Diagram of the device’s application featuring integrated VIS and NIR vision.

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Fig. 2. Device performance in top illumination mode. (a) I-V characteristics at dark and light conditions (0.2 mW with 0.3 cm2 of light spot area). (b) Time-dependent photoresponse (0.1 mW, 660 nm, 0 V). (c) LDR characteristics. (d) Responsivity and special detectivity at 0 V bias.

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Fig. 3. Characterization of the PVK filter film and device performance under bottom illumination. (a) XRD pattern and structural formula of the MAPbI3 perovskite film. (b) SEM image of the MAPbI3 perovskite film. (c) Absorption and photoluminescence (PL) spectra of the MAPbI3 perovskite film. (d) Transmittance spectra of the MAPbI3 perovskite film. (e) Responsivity spectrum and spectral response rejection ratio of the device in the bottom modality. (f) Response time (rise and decay) of the device at 905 nm with a modulation frequency of 5 kHz.

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Fig. 4. Principle of the dual-mode single-pixel camera. (a) Schematic of our proposed dual-mode single-pixel imaging system featuring a flappable dual-mode PD. (b) Workflow of the dual-mode single-pixel imaging algorithm.

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Fig. 5. VIS/NIR dual-mode imaging results. (a) Photograph of the imaging object with letters “XDU” written in near-infrared ink in the middle row. (b), (c) I-m curves with 32,768 patterns obtained by the top (b) and bottom modes (c). (d) Top imaging results (broad spectrum images) with different pattern numbers; from right to left, m is 128, 512, 2048, 8192, and 32,768, and the corresponding effective pixels (EP) are 64, 256, 1024, 4096, and 16,384. (e) Bottom imaging results (NIR images). (f) Pure VIS images by subtracting bottom mode images (e) from top mode images (d). (g) NIR enhanced fused images by overlaying bottom mode images (e) and top mode images (d).

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Table 1. Performance Comparison of the VIS-NIR Dual-Mode PDs

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Table 1. Performance Comparison of the VIS-NIR Dual-Mode PDs

Device	Mode	D* (Jones)	Speed	LDR (dB)	Refs.
PVK-Au/Si/Ag	VIS at 660 nm	$5.56 \times 10^{13}$ at 0 V	25 μs	199	This work
PVK-Au/Si/Ag	NIR at 900 nm	$4.1 \times 10^{13}$ at 0 V	25 μs	169	This work
$Ge / {MoS}_{2}$	VIS at 406 nm	$3 \times 10^{10}$ at −3.5 V	20 ms	–	[18]
$Ge / {MoS}_{2}$	NIR at 1550 nm	$10^{6}$ at −0.5 V	10 ms	–	[18]
$PFN - Br / P 3 HT : {PC}_{70} BM$	VIS at 500 nm	$2 \times 10^{12}$ at 12 V	–	92	[14]
$PFN - Br / P 3 HT : {PC}_{70} BM$	NIR at 800 nm	$3 \times 10^{11}$ at −35 V	–	120	[14]
PVK-Si	VIS at 600 nm	$7.7 \times 10^{11}$ at 3 V	$\sim s$	–	[19]
PVK-Si	NIR at 850 nm	$8.9 \times 10^{12}$ at −3 V	$\sim s$	–	[19]
PVK-PVK	VIS at 400 nm	$1.25 \times 10^{12}$ at −0.5 V	124.5 ns	102	[17]
PVK-PVK	NIR at 900 nm	$3.1 \times 10^{12}$ at 0.6 V	37.2 ns	114	[17]
PVK-organic	VIS at 625 nm	$4.3 \times 10^{9}$ at 0.7 V	10 μs	122	[15]
PVK-organic	NIR at 900 nm	$1.2 \times 10^{12}$ at −1.5 V	32.3 μs	130	[15]

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Yujin Liu, Dongxu Lin, Jingyang Xing, Hanyan Zhao, Hongling Wan, Hao Wang, Zhong Ji, Xueli Chen, "Mode-switching single-pixel imaging via a high-performance perovskite-Si dual-mode photodetector," Photonics Res. 12, 2873 (2024)

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Paper Information

Category: Optoelectronics

Received: May. 21, 2024

Accepted: Sep. 19, 2024

Published Online: Nov. 28, 2024

The Author Email: Zhong Ji (jizhong@xidian.edu.cn), Xueli Chen (xlchen@xidian.edu.cn)

DOI:10.1364/PRJ.530675

CSTR:32188.14.PRJ.530675

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology