Fig. 1. VCSEL structure and distribution of refractive index and standing wave field intensity near active region

Fig. 2. In_0.28Ga_0.72As/GaAs_0.8P_0.2 quantum well gains spectra under different temperatures

Fig. 3. Comparison of different quantum wells. (a) In component versus thicknesses of 1040 nm InGaAs quantum wells; (b) different quantum wells gain spectra; (c) variation of peak gains with temperature for different quantum wells; (d) output power curves of VCSEL with different quantum wells

Fig. 4. Comparison of different barriers. (a) Variation of quantum well peak gains with temperature for different barriers; (b) variation of transparent carrier concentrations with temperature for different barriers; (c) output powers of VCSEL with different barriers

Fig. 5. Maximum reflectivity curves of DBRs with different gradient layer thicknesses varying with DBR pairs

Fig. 6. Comparison of different DBRs. (a) Energy bands of DBRs with different gradient layer thicknesses; (b) reflection spectra of DBRs with different gradient layer thicknesses

Fig. 7. P-I-V curves of different devices. (a) Single VCSEL; (b) 288-element VCSEL array; (c) 5 mm×5 mm VCSEL array

Fig. 8. Spectra at different input currents