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Opto-Electronic Engineering, Volume. 31, Issue 1, 1(2004)

Phase-shifting mask for 100nm node ArF excimer laser lithography

[in Chinese]1, [in Chinese]1, [in Chinese]1, [in Chinese]1, [in Chinese]2, and [in Chinese]2
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  • 2[in Chinese]
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    [1] [1] SEWELL Harry,RAVAL Pankaj,BUNGE Victar.Challenges for the 1oonm Node [J]. SPIE,2001, 4346:1462-1477.

    [2] [2] SEWELL Harry,COTE Daniel,WILLIAMSON David,et al.High Numerical Aperture 193nm Exposure Tool [J]. SPIE,2001,4346:606-620.

    [3] [3] LEVENSON M D ,VISWANATHAN N S,SIMPSON A R.Improving Resolution in Photolithography with a Phase-Shifting Mask [J].IEEE Trans. on Electron Device,1982,ED29(12):1828-1836.

    [4] [4] TABERY C E,SPENCE C A.Evaluation of 3D Alternating PSM Structures Using Mask Topography Simulation a AIMS at λ=193nm [J].SPIE,2001,4346:429-440.

    [5] [5] HOSONU Kouji,ISHIWATA Naoyuki,ASAI Satoru,et al.Preliminary study of 65nm node alternating phase-shift mask fabrication [J]. SPIE,2002 ,4889:1273-1280.

    [7] [7] KOO Sang-Sool,KIN Sang-Jin,PAEK Seung-weon,et al.Feasibility Study on the ArF Attenuated Phase Shift Mask for 100nm-node Lithography [J]. SPIE,2001,4346:770-777.

    [8] [8] VAN DEN BROEKE D J, CHEN J F,LAIDIG Thomas,et al. Cumplex 2D pattern Lithogrhy at λ/4 Resolution Using Chromeless Phase Lithographg(CPL) [J]. SPIE,2002,4691: 196-214.

    [9] [9] HSU Chungwei,CHOU Ron,WANG Troy,et al.Patterning 0.1μ Devices by Using Hybrid PSM [J]. SPIE,2001,4346:441-451.

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Phase-shifting mask for 100nm node ArF excimer laser lithography[J]. Opto-Electronic Engineering, 2004, 31(1): 1

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    Paper Information

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    Received: Sep. 8, 2003

    Accepted: --

    Published Online: Nov. 14, 2007

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    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology