Laser & Optoelectronics Progress, Volume. 52, Issue 4, 41405(2015)

Property Degradation of GaAs/Ge Solar Cells after Femtosecond Laser Irradiation

Xue Qing1、*, Wu Wenhui1, Ye Yunxia1, Liu Haixia2, Chen Ruifang1, and Hua Yinqun1,2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    CLP Journals

    [1] Xie Boshi, Dai Pan, Luo Xiangdong, Lu Shulong. IV Characteristics and Analysis for GaAs Based Single Junction Solar Cells with Different Back Surface Fields[J]. Acta Optica Sinica, 2017, 37(2): 223002

    [2] Zhao Hongyu, Wei Zhi, Jin Guangyong. Numerical Research on Photodiode Damage by Multi-Pulsed Laser Irradiation[J]. Laser & Optoelectronics Progress, 2017, 54(4): 40401

    [3] [in Chinese], [in Chinese], [in Chinese], Shih Cheng-Yu. Calculation of Argon-Aluminum Interatomic Potential and Its Application in Molecular Dynamics Simulation of Femtosecond Laser Ablation[J]. Chinese Journal of Lasers, 2016, 43(8): 802004

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    Xue Qing, Wu Wenhui, Ye Yunxia, Liu Haixia, Chen Ruifang, Hua Yinqun. Property Degradation of GaAs/Ge Solar Cells after Femtosecond Laser Irradiation[J]. Laser & Optoelectronics Progress, 2015, 52(4): 41405

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    Paper Information

    Category: Lasers and Laser Optics

    Received: Oct. 27, 2014

    Accepted: --

    Published Online: Apr. 2, 2015

    The Author Email: Xue Qing (alphaqing@ujs.edu.cn)

    DOI:10.3788/lop52.041405

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