Chinese Journal of Lasers, Volume. 45, Issue 10, 1005004(2018)
Thermal Lens Effect of High Power Semiconductor Laser Waveguide and Its Influence on Beam Divergence Angle of Slow Axis
Figures & Tables(9)
Fig. 3. Temperature distribution of chip front cavity surface at laser thermal power of 10 W
Fig. 4. Junction temperature distribution along slow axis direction in laser bar area
Fig. 5. Relationship between laser thermal power and (a) central junction temperature and (b) thermal lens focal length and divergence angle
Fig. 6. Relationship between working current and (a) central wavelength, (b) working voltage, and (c) light power in experiment; (d) three-dimensional intensity distribution of light spot at 10 A working current
Fig. 7. Measured and simulated slow axis divergence angle varies with working current
Fig. 8. Far-field patterns measured at working currents of (a) 5 A, (b) 6 A, (c) 7 A, (d) 8 A
Table 1. Material parameters of lasers
View tableTable 1. Material parameters of lasers
Various parts of the LD Size /(mm×mm×mm) Material Thermal conductivity /(W·m-1·K-1) Cu heat sink 25×8.1×5.1 Cu 398 AlN heat sink 6×6×0.3 AlN 180 Laser chip 4×1×0.12 GaAs 55 AuSn/Au 4×1×0.003 AuSn 57
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Song Jian, Gao Xin, Yan Hongyu, Zhang Xiaolei, Zhang Zheming, Xu Yumeng, Gu Huaxin, Liu Lining, Bo Baoxue. Thermal Lens Effect of High Power Semiconductor Laser Waveguide and Its Influence on Beam Divergence Angle of Slow Axis[J]. Chinese Journal of Lasers, 2018, 45(10): 1005004
Paper Information
Category: Beam transmission and control
Received: Mar. 16, 2018
Accepted: --
Published Online: Oct. 12, 2018
The Author Email: Baoxue Bo (bbx@cust.edu.cn)
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