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Laser & Optoelectronics Progress, Volume. 54, Issue 11, 111602(2017)

Properties of GaAs0.9Sb0.1 Epilayer Grown by Two Growth Models of Liquid Phase Epitaxy Technique

Xie Hao1,2, Hu Shuhong1、*, Wang Yang1,2, Huang Tiantian1,2, Pan Xiaohang1, Sun Yan1, and Dai Ning1
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    Xie Hao, Hu Shuhong, Wang Yang, Huang Tiantian, Pan Xiaohang, Sun Yan, Dai Ning. Properties of GaAs0.9Sb0.1 Epilayer Grown by Two Growth Models of Liquid Phase Epitaxy Technique[J]. Laser & Optoelectronics Progress, 2017, 54(11): 111602

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    Paper Information

    Category: Materials

    Received: May. 16, 2017

    Accepted: --

    Published Online: Nov. 17, 2017

    The Author Email: Hu Shuhong (hush@mail.sitp.ac.cn)

    DOI:10.3788/lop54.111602

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology