Fig. 1. Schematic diagram of structure and working principle of B-B SJ synapse device

Fig. 2. Schematic diagram of operation mechanism of the optical pain sensor simulator device

Fig. 3. Film properties. (a) AFM imag; (b) polarized optical microscopy image; (c) I-V and noise curves of device

Fig. 4. Threshold jump triggered by illumination intensity and short-term plasticity behavior of the device. (a) EPSC jump triggered by light intensity; (b) single-pulse EPSC and PPE behaviors; (c) PPF changes with time intervals

Fig. 5. Multi-pulsing behavior of the device under different light intensities. (a) Different device weight states programmed with different numbers of pulses; (b) rehearsal-triggered EPSC jump

Fig. 6. Photoresponsive current curves of Si₃N₄ devices with different thicknesses. (a) No Si₃N₄; (b) 100 nm; (c) 80 nm; (d) 10 nm