Journal of Infrared and Millimeter Waves, Volume. 42, Issue 6, 742(2023)

Surface potential alignment in MoS2 and MoTe2 homo- and hetero-junctions

Cong JIANG1,2, Shuai-Jun ZHANG2, Yu-Ying LI2,3, Wen-Jing WANG2,4, Hui XIA1,2,3、*, and Tian-Xin LI2,3
Author Affiliations
  • 1College of Science,University of Shanghai for Science and Technology,Shanghai 200093,China
  • 2State Key Laboratory of Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China
  • 3University of Chinese Academy of Sciences,Beijing 100049,China
  • 4Mathematics and Science College,Shanghai Normal University,Shanghai 200234,China
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    References(32)

    [17] Boker T, Severin R, Muller A et al. Band structure of MoS2, MoSe2, and alpha-MoTe2: Angle-resolved photoelectron spectroscopy and ab initio calculations[J]. Physical Review B, 64, 235305(2001).

    [28] Pezeshki A, Hossein S, Shokouh H et al. Electric and Photovoltaic Behavior of a Few-Layer alpha-MoTe2/MoS2 Dichalcogenide Heterojunction[J]. Advanced Materials, 28, 3216-3222(2016).

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    Cong JIANG, Shuai-Jun ZHANG, Yu-Ying LI, Wen-Jing WANG, Hui XIA, Tian-Xin LI. Surface potential alignment in MoS2 and MoTe2 homo- and hetero-junctions[J]. Journal of Infrared and Millimeter Waves, 2023, 42(6): 742

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    Paper Information

    Category: Research Articles

    Received: Feb. 27, 2023

    Accepted: --

    Published Online: Dec. 26, 2023

    The Author Email: Hui XIA (huix@mail.sitp.ac.cn)

    DOI:10.11972/j.issn.1001-9014.2023.06.006

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